MOSTSM: a physically based charge conservative MOSFET model

Subjects

Subjects :

New Technique
Research and Development
Modeling
Circuit Design
Simulation
MOS Integrated Circuits
Methods
Cost Benefit Analysis
Comparison
Field-Effect Transistors

Details

ISSN :

02780070

Volume :

v7

Issue :

n12

Database :

Gale General OneFile

Journal :

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Publication Type :

Academic Journal

Accession number :

edsgcl.7253455