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Polysilicon quantization effects on the electrical properties of MOS transistors
- Source :
- IEEE Transactions on Electron Devices. Dec, 2000, Vol. 47 Issue 12, p2366, 6 p.
- Publication Year :
- 2000
-
Abstract
- Quantum-mechanical behaviour of charge carriers at the polysilicon/oxide interface was examined.
Details
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.71837790