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1.3-mu m emission of Nd: LaF3 thin films grown by molecular beam epitaxy

Authors :
Zhang, X.
Lahoz, F.
Serrano, C.
Lacoste, G.
Daran, E.
Source :
IEEE Journal of Quantum Electronics. Feb, 2000, Vol. 36 Issue 2, p243, 5 p.
Publication Year :
2000

Abstract

1.3-mu m emission of Nd:LaF3 thin films grown by molecular beam epitaxy on LaF3 and CaF2 substrates, is reported.

Details

ISSN :
00189197
Volume :
36
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Journal of Quantum Electronics
Publication Type :
Academic Journal
Accession number :
edsgcl.71066604