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1.3-mu m emission of Nd: LaF3 thin films grown by molecular beam epitaxy
- Source :
- IEEE Journal of Quantum Electronics. Feb, 2000, Vol. 36 Issue 2, p243, 5 p.
- Publication Year :
- 2000
-
Abstract
- 1.3-mu m emission of Nd:LaF3 thin films grown by molecular beam epitaxy on LaF3 and CaF2 substrates, is reported.
Details
- ISSN :
- 00189197
- Volume :
- 36
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Journal of Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.71066604