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Separation of effects of statistical impurity number fluctuations and position distribution on Vth fluctuation in scales MOSFETs

Authors :
Yassuda, Y
Takamiya, M
Hiramoto, T
Source :
IEEE Transactions on Electron Devices. Oct, 2000, Vol. 47 Issue 10, p1838, 5 p.
Publication Year :
2000

Details

ISSN :
00189383
Volume :
47
Issue :
10
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.69666665