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Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells

Authors :
Pozina, G.
Bergman, J.P.
Monemar, B.
Takeuchi, T.
Amano, H.
Akasaki, I.
Source :
Journal of Applied Physics. Sept 1, 2000, Vol. 88 Issue 5, p2677, 5 p.
Publication Year :
2000

Abstract

In0.12Ga0.88N/GaN multiple quantum wells were studied using optical spectroscopy.

Details

ISSN :
00218979
Volume :
88
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.67687107