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GaAs quantum wire lasers grown on V-grooved substrates isolated by self-aligned ion implantation
- Source :
- IEEE Transactions on Electron Devices. Sept, 2000, Vol. 47 Issue 9, p1769, 4 p.
- Publication Year :
- 2000
-
Abstract
- Multiple vertically stacked GaAs/A1xGa1-xAs quantum wire laser diodes were formed using metal organic vapor phase epitaxy on GaAs substrates.
Details
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.66626562