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Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress
- Source :
- Journal of Applied Physics. Dec 15, 1999, Vol. 86 Issue 12, p6895, 7 p.
- Publication Year :
- 1999
-
Abstract
- The heating behavior of doped Si channels was investigated under high current stress.
- Subjects :
- Silicon-on-isolator -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 86
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.66188867