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A four-qubit germanium quantum processor

Authors :
Hendrickx, Nico W.
Lawrie, William I. L.
Russ, Maximilian
van Riggelen, Floor
de Snoo, Sander L.
Schouten, Raymond N.
Sammak, Amir
Scappucci, Giordano
Veldhorst, Menno
Source :
Nature. March 25, 2021, Vol. 591 Issue 7851, p580, 6 p.
Publication Year :
2021

Abstract

The prospect of building quantum circuits.sup.1,2 using advanced semiconductor manufacturing makes quantum dots an attractive platform for quantum information processing.sup.3,4. Extensive studies of various materials have led to demonstrations of two-qubit logic in gallium arsenide.sup.5, silicon.sup.6-12 and germanium.sup.13. However, interconnecting larger numbers of qubits in semiconductor devices has remained a challenge. Here we demonstrate a four-qubit quantum processor based on hole spins in germanium quantum dots. Furthermore, we define the quantum dots in a two-by-two array and obtain controllable coupling along both directions. Qubit logic is implemented all-electrically and the exchange interaction can be pulsed to freely program one-qubit, two-qubit, three-qubit and four-qubit operations, resulting in a compact and highly connected circuit. We execute a quantum logic circuit that generates a four-qubit Greenberger-Horne-Zeilinger state and we obtain coherent evolution by incorporating dynamical decoupling. These results are a step towards quantum error correction and quantum simulation using quantum dots. Using germanium quantum dots, a four-qubit processor capable of single-, two-, three-, and four-qubit gates, demonstrated by the creation of four-qubit Greenberger-Horne-Zeilinger states, is the largest yet realized with solid-state electron spins.<br />Author(s): Nico W. Hendrickx [sup.1] , William I. L. Lawrie [sup.1] , Maximilian Russ [sup.1] , Floor van Riggelen [sup.1] , Sander L. de Snoo [sup.1] , Raymond N. Schouten [...]

Details

Language :
English
ISSN :
00280836
Volume :
591
Issue :
7851
Database :
Gale General OneFile
Journal :
Nature
Publication Type :
Academic Journal
Accession number :
edsgcl.656154267
Full Text :
https://doi.org/10.1038/s41586-021-03332-6