New MOSFETs Revise Power-Transistor Performance Specs

Improved characteristics in power MOSFETs include reduced on-resistance and lower overall capacitance. Improvements have been most evident in low-voltage devices. Conductivity of a given chip size may be increased fourfold, drastically reducing heat-sinking requirements. Designers may select replacements on the basis of on-resistance or current ratings enabling use of a device with a smaller die. Die-size information is shown in a table, and a chart show the on-resistance values for first, second, and third generation TMOS transistors. A graph show the rise in case temperature during typical application to the efficiency of the latest chip designs. Another diagram illustrates a control circuit tailored for a blower motor employing a p-channel MOSFET for the power switch. The MOSFET's expansion into the power transistor market is likely to increase as designers come to realize the efficiency and economy of low-voltage MOSFETs.