Patent Issued for Methods For Forming A Metal Silicate Film On A Substrate In A Reaction Chamber And Related Semiconductor Device Structures (USPTO 10,818,758)

MLA

“Patent Issued for Methods For Forming A Metal Silicate Film On A Substrate In A Reaction Chamber And Related Semiconductor Device Structures (USPTO 10,818,758).” Electronics Newsweekly, 10 Nov. 2020, p. 8487. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.640904727&authtype=sso&custid=ns315887.

APA

Patent Issued for Methods For Forming A Metal Silicate Film On A Substrate In A Reaction Chamber And Related Semiconductor Device Structures (USPTO 10,818,758). (2020, November 10). Electronics Newsweekly, 8487.

Chicago

Electronics Newsweekly. 2020. “Patent Issued for Methods For Forming A Metal Silicate Film On A Substrate In A Reaction Chamber And Related Semiconductor Device Structures (USPTO 10,818,758),” November 10. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.640904727&authtype=sso&custid=ns315887.