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Temperature dependence of Raman scattering in hexagonal gallium nitride films
- Source :
- Journal of Applied Physics. April 1, 2000, Vol. 87 Issue 7, p3332, 6 p.
- Publication Year :
- 2000
-
Abstract
- An investigation of first-order Raman scattering of hexagonal GaN single crystal films deposited on sapphire substrate by low pressure metal organic chemical vapour deposition is presented. It was possible to obtain the temperature dependence of the five GaN Raman modes.
- Subjects :
- Raman effect -- Research
Thin films -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 87
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.63143086