A study of electrically active defects created in p-InP by CH(sub.4):H(sub.2) reactive ion etching

An investigation of electrically active defects in p-InP by CH(sub.4):H(sub.2) from reactive ion etching (RIE) is discussed. The main defect, a donor with an energy level at E(sub.c) - 0.38eV, was passivated by hydrogen. Optical deep-level transient spectroscopy, Schottky barrier height measurements, and rapid thermal annealing were used to identify defects.