A System for Radiation Damage Monitoring

Authors :: Rosenfeld, A.B.
Reinhard, M.I.
Marinaro, D.
Ihnat, P.
Taylor, G.
Peak, L.
Freeman, N.
Alexiev, D.
Lerch, M.
Source :: IEEE Transactions on Nuclear Science. Dec, 1999, Vol. 46 Issue 6, 1766
Publication Year :: 1999
Abstract: An automatic radiation damage monitoring system has been developed and tested. The system is based on two passive sensors for the measurement of integral ionizing and non-ionizing energy losses in silicon devices. Ionizing dose is measured in terms of dose in Si[O.sub.2] and displacement damage in terms of 1 MeV(Si) equivalent neutron fluence. The system uses MOSFETs and PIN dosimetric diodes.