Investigators from Cardiff University Release New Data on Electron Devices (Multi-channel Algan/gan Lateral Schottky Barrier Diodes On Low-resistivity Silicon for Sub-thz Integrated Circuits Applications)

MLA

“Investigators from Cardiff University Release New Data on Electron Devices (Multi-Channel Algan/Gan Lateral Schottky Barrier Diodes On Low-Resistivity Silicon for Sub-Thz Integrated Circuits Applications).” Electronics Newsweekly, 25 June 2019, p. 223. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.590293117&authtype=sso&custid=ns315887.

APA

Investigators from Cardiff University Release New Data on Electron Devices (Multi-channel Algan/gan Lateral Schottky Barrier Diodes On Low-resistivity Silicon for Sub-thz Integrated Circuits Applications). (2019, June 25). Electronics Newsweekly, 223.

Chicago

Electronics Newsweekly. 2019. “Investigators from Cardiff University Release New Data on Electron Devices (Multi-Channel Algan/Gan Lateral Schottky Barrier Diodes On Low-Resistivity Silicon for Sub-Thz Integrated Circuits Applications),” June 25. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.590293117&authtype=sso&custid=ns315887.