Electrical characterization of He-ion implantation-induced deep levels in p(super +)n InP junctions

The electrical properties of electron and hole traps found in fully implanted p(super +)n InP junctions have been studied through deep-level transient spectroscopy. Results indicate the presence of an electron trap, E8, a hole trap, H2, located 0.19 eV below the conduction band and 0.13 eV above the valence bond. The high-temperature capture cross sections were determined to be 9.5 x 10 raised to the -17th power and 5.2 x 10 raised to the -19th power cm squared, respectively.