Lithographically patterned wires of the charge-density-wave conductor Rb0.30MoO3

A thin-film patterning technology for a charge-density-wave (CDW) conductor, Rb0.30MoO3, was developed. The patterning of Rb0.30MoO3 was carried out by the use of near-ultraviolet photolithography. The thin-film CDW devices were realized by contacting the wires with submicron Au contacts with spacings down to 100 nm. The good CDW properties suggest that the patterning process has not substantially affected the Rb0.30MoO3 material.