Band gap narrowing in n-type and p-type 3C, 2H-, 4H-, 6H-SiC, and Si

Research was conducted to calculate the energy shifts of the conduction band minimum and of the valence band maximum as functions of ionized impurity concentration for both n-type and p-type 3C, 2H-, 4H-, 6H-SiC, and Si. The true energy dispersions and overlap integrals were taken into consideration. Results reveal that the nonparabolicity of the valence band curvatures influences the calculated self-energies of the valence band maximum.