Two-dimensional numerical simulation of edge-generated currents in type-inverted, p+-n single-sided silicon microstrip detectors

A theoretical study is presented showing that the reverse leakage current thermally generated at the cutting edge of type-inverted [p.sup.+]-n single-sided silicon microstrip detectors is limited. Such behavior is shown to be related to a self-limiting mechanism acting on the edge surface generation, which prevents the net generation rate of electron-hole pairs at the detector edge from exceeding a saturation value, as the local hole density approaches its equilibrium value. Index Terms - Numerical device simulation, radiation damage, silicon microstrip detectors.