Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements

Nondestructive calculations were performed on metal contaminated silicon wafers via photothermal radiometric measurements. The method relies on measuring the blackbody radiation emitted from a material excited by a modulated laser source. Results indicate that the photothermal radiometric method is a potentially useful approach for nondestructively investigating the influence of metal-dopant dosage on silicon wafers.