Microstructure and interfacial states of silicon dioxide film grown by low temperature remote plasma enhanced chemical vapor deposition

Research was conducted to examine the characteristics of SiO2 film and the Si/SiO2 interface formed by remote plasma enhanced chemical vapor deposition with the addition of chlorine into SiH4-N2O. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ellipsometry, secondary ion mass spectroscopy, electron spin resonance, transmission electron microscopy and atomic force microscopy were used to characterize the SiO2 films deposited with the chlorine addition.