Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method

Indium tin oxide (ITO) films were produced from an oxidized target with In2O3 and SnO2 using the radiofrequency magnetron sputtering technique. Hydrogen was added to the gas mixture during the preparation of the ITO films. The effect of hydrogen partial pressure on the structural and optoelectronic characteristics of the ITO films was investigated. Hall effect measurements showed that the addition of hydrogen in the sputtering gas mixture caused an increase in the number of charge carriers in the ITO films. However, the carrier mobility did not increase substantially.