Moss-Burstein and plasma reflection characteristics of heavily doped n-type In(sub x)Ga(sub 1-x)As and InP(sub y)As(sub 1-y)

A study on suitable plasma spectral control filters for thermophotovoltaic generation systems investigated the optical properties of heavily doped low-band-gap III-V Results indicate that the low effective masses of degenerately doped n-In(sub x)Ga(sub 1-x)As and n-InP(sub y)As(sub 1-y) make these materials ideal plasma filters for thermophotovoltaic applications. This ensures high majority carrier mobility and a large Moss-Burstein shift at carrier concentrations exceeding 5 x 10 to the 19th power/cm3.