GaN: processing, defects, and devices

An analysis of the role of extended and point defects and key impurities such as C, O, and H, on the optical and electrical properties of GaN was conducted. The rapid development and commercialization of blue and green light-emitting diodes (LEDs) and the achievement of long-lifetime laser diodes was followed by realization of UV photodetectors and several different electronic devices. Continued rapid development in the areas of LEDs, laser diodes, microwave and digital electronic devices, UV detectors ad high voltage unipolar and bipolar devices is expected as an improved understanding of the defect and impurity issues in these materials evolve.