New Findings from Tsinghua University Describe Advances in Optoelectronics (Enhanced photoresponsivity and hole mobility of MoTe2 phototransistors by using an Al2O3 high-kappa gate dielectric)

Source :: Electronics Newsweekly. August 28, 2018, 269
Publication Year :: 2018
Abstract: 2018 AUG 28 (VerticalNews) -- By a News Reporter-Staff News Editor at Electronics Newsweekly -- Data detailed on Optoelectronics have been presented. According to news reporting from Beijing, People's Republic [...]

Subjects :: Aluminum oxide -- Research -- Technology application
Optoelectronics industry -- Research -- Technology application
Transistors -- Research -- Technology application
Technology application
Electronics
Tsinghua University -- Technology application

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