Fabrication of a lateral field emission triode with a high current density and high transconductance using the local oxidation of the polysilicon layer

A study was conducted to analyze a lateral type polysilicon field emission triode utilizing standard photolithography and a local oxidation of polysilicon method in a lateral direction. The techniques supported good reproducibility in shaping sharp electrode tips and controlling the short cathode-to-gate inter-electrode distance. Results indicated that the device featured excellent electrical properties.