Patent Issued for High-K Gate Dielectric and Metal Gate Conductor Stack for Fin-Type Field Effect Transistors Formed on Type III-V Semiconductor Material and Silicon Germanium Semiconductor Material (

Source :: Life Science Weekly. July 10, 2018, 5679
Publication Year :: 2018
Abstract: 2018 JUL 10 (NewsRx) -- By a News Reporter-Staff News Editor at Life Science Weekly -- International Business Machines Corporation (Armonk, NY) has been issued patent number 10002871, according to [...]

Subjects :: International Business Machines Corp. -- Intellectual property
Field effect transistors
Office equipment
Silicon
Patents
Computer industry -- Intellectual property
Patent/copyright issue
Microcomputer industry
Computer industry
Biological sciences
Health

Tools