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Effects of optical absorption on the quasi-Fermi level splitting at the emitter-base junction in npn heterojunction bipolar phototransistors
- Source :
- IEEE Transactions on Electron Devices. April, 1999, Vol. 46 Issue 4, p669, 6 p.
- Publication Year :
- 1999
-
Abstract
- The effects of optical absorption in the quasi-neutral base region of npn heterojunction bipolar phototransistors on the extent of electron quasi-Fermi level splitting at the emitter-base heterojunction interface were studied. The increase in minority carrier concentration produced by optical generation in the base led to a decrease in the quasi-Fermi level splitting at the heterojunction interface which reduces the net electron injection into the base and emitter injection efficiency.
Details
- ISSN :
- 00189383
- Volume :
- 46
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.54483765