Microwave characteristics of BARITT diodes based on silicon carbide

The microwave properties of barrier-injected transit-time (BARITT) diodes made of silicon carbide were investigated. Experimental results showed that the negative resistance of p(super +)-n-p(super +) structure made of various polytypes of silicon carbide is an order of magnitude higher in absolute value compared with the silicon p(super +)-n(super +) structure even in the absence of trap levels when all things are considered equal. In addition, the dynamic negative resistance expressed in absolute value, efficiency and power output increase as the concentration of traps increases.