High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

One kV 4H and 6H SiC Schottky diodes have been fabricated using a metal-oxide overlap structure for electric field termination. The design considerations, fabrication methodology and characterization results were presented. Experimental evidence shows that the metal-oxide overlap structure consistently leads to fabrication of Schottky diodes in good yield when used in combination with a high barrier height metal such as nickel. The Schottky diodes exhibit good rectifying behavior with ON/OFF current ratios.