Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well

The transition of carrier distribution from the strained to the relaxed state in In(sub 0.2)Ga(sub 0.8)As/GaAs quantum well was studied by measuring capacitance voltage and analyzing x-ray diffraction. Results indicated that the transition occurs when InGaAs thickness increases beyond the critical thickness. This suggested that the capacitance-voltage measurement is a very sensitive technique for determining critical thickness.