Impurity photovoltaic effect in c-Si solar cells. A numerical study

Research was conducted to examine the crystalline silicon p-n junction solar cells containing a high density of In impurities. The continuity equations for electrons, holes and defect levels and the numerical resolution of Poisson's equation generates the current-voltage curves for several impurity concentrations. Results demonstrate that an increase of the short-circuit current densities of up to 6 mA/cm2 can be derived with the highest In impurity concentration. However, this results in the reduction of the open-circuit voltage and of the energy conversion efficiency.