Structure of restacked MoS2 and WS2 elucidated by electron crystallography

A study was conducted to analyze the restacked nature of MoS2 and WS2 using electron crystallography. Experimental results indicated that MoS2 and WS2 support preferred orientation resulting the ab plane to be perpendicular to the electron beam. Findings also showed that the exfoliation/flocculation process would promote turbostratic materials or materials that are susceptible to stacking faults.