Luminescence from dislocations in silicon-germanium layer grown on silicon substrate

The temperature and the power dependence of the luminescence that resulted from the dislocations near the interface in the underlying silicon substrate side were analyzed using very thin and partially strained Si0.6Ge0.4/Si heterostructure. Dissociative energies were determined and compared to the literature values. Further, the absence of SiGe D lines was associated with the combined effects of the small conduction band offset and the large capture probability of the carriers by the dislocations in the main Si substrate.