A physical-based analytical turn-on model of polysilicon thin-film transistors for circuit simulation

A physical-based analytical current model of polycrystalline silicon thin-film transitors for circuit simulation that is characterized by temperature dependence, barrier potential at grain boundaries and drain induced grain barrier lowering and the kink effect is introduced. This model includes an accurate model of the kink effect whose parameters can be used in polysilicon thin film transistors with different sizes.