Double peak phenomenon in superconducting tunnel junction x-ray detectors

A study was conducted to analyze double peak phenomenon in superconducting tunnel junction x-ray detectors. Square junctions were fabricated by the dc-sputtering of aluminum surface by photolithographic patterning using reactive ion etching. Results indicated that the double peak correlated with the dynamics of quasiparticles resulting from x-ray absorption events. In addition, the double peak phenomenon was influenced by by bias voltage and magnetic history.