The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy

A study was conducted to show that the emission wavelength of (InP)2/(GaP)2 short-period superlattice quantum wells can be changed by altering the tilt angle of the substrate or by adjusting the interruption time during switching. Variable temperature photoluminescence spectroscopy was carried out to characterize the samples. Results indicated that the growth mechanism can be determined through the bonding preference between the group III adatoms on the surface.