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Patent Issued for Fin-Double-Gated Junction Field Effect Transistor (USPTO 9748239)
- Source :
- Electronics Newsweekly. September 12, 2017, 2375
- Publication Year :
- 2017
-
Abstract
- 2017 SEP 12 (VerticalNews) -- By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Cheng, Kangguo (Schenectady, NY); Ning, Tak H. (Yorktown Heights, NY), [...]
- Subjects :
- International Business Machines Corp. -- Intellectual property
Semiconductor industry -- Intellectual property
Field effect transistors
Office equipment
Patents
Electronic components
Semiconductors (Materials)
Computer industry -- Intellectual property
Semiconductor industry
Semiconductor device
Patent/copyright issue
Microcomputer industry
Computer industry
Electronics
Subjects
Details
- Language :
- English
- ISSN :
- 19441630
- Database :
- Gale General OneFile
- Journal :
- Electronics Newsweekly
- Publication Type :
- News
- Accession number :
- edsgcl.503958673