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A method to evaluate explosive crystallization velocity of amorphous silicon films during flash lamp annealing
- Source :
- Canadian Journal of Physics. July 1, 2014, Vol. 92 Issue 7, p718, 5 p.
- Publication Year :
- 2014
-
Abstract
- Flash lamp annealing (FLA) of micrometre-order thick amorphous silicon (a-Si) films can induce explosive crystallization (EC), high-speed lateral crystallization driven by the release of latent heat. We develop multi-pulse FLA system, which emits a quasi-millisecond pulse consisting of a number of subpulses. The emission frequency of the subpulses can be systematically controlled, and the emission of subpulses leads to the periodic modulation of the temperature of a Si film and the resulting formation of macroscopic stripe patterns. The relationship between a subpulse emission frequency and the width of the macroscopic stripe patterns yields EC velocity. Two kinds of EC modes can be observed, depending on the methods of precursor a-Si deposition and (or) a-Si film thickness. PACS Nos.: 81.10Jt, 81.40.Ef, 88.40.jj. Le recuit par lampe a decharge (FLA) de films de silicium amorphe (a-Si) peut causer une cristallisation spontanee (explosive) (EC) ou une cristallisation laterale induite, soutenue par le rejet de chaleur latente. Nous developpons un systeme de recuit par lampe a decharge multi-pulse qui emet des impulsions presque milliseconde consistant en un nombre de sousimpulsions. La frequence d'emission de ces sous-impulsions peut etre controlee et l'emission de ces sous- impulsions mene aune modulation de la temperature du film de Si, d'oU il resulte la formation d'un patron en bandes macroscopiques. La relation entre la frequence d'emission des sous-impulsions et la largeur de ces bandes donne la vitesse de EC. Nous observons deux types de modes EC, dependant de la methode de deposition du precurseur Si et (ou) de l'epaisseur du film de a-Si. [Traduit par la Redaction]<br />1. Introduction Thin-film crystalline Si (c-Si) is of great interest as a photovoltaic material because of the possibility of high efficiency and efficient material usage. Of a variety of methods [...]
Details
- Language :
- English
- ISSN :
- 00084204
- Volume :
- 92
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Canadian Journal of Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.381836644
- Full Text :
- https://doi.org/10.1139/cjp-2013-0574