A solution toward the OFF-state degradation in drain-extended MOS device

Subjects

Subjects :

Metal oxide semiconductors -- Innovations
Tunneling (Physics) -- Analysis
Voltage -- Measurement
Simulation methods -- Usage
Time-domain analysis -- Usage
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

12

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.317501562