Negative-bias temperature instability in gate-all-around silicon nanowire MOSFETs: characteristic modeling and the impact on circuit aging

Subjects

Subjects :

Metal oxide semiconductor field effect transistors -- Innovations
Silicon compounds -- Electric properties
Simulation methods -- Usage
Oxidation-reduction reaction -- Analysis
Random access memory -- Usage
Voltage -- Measurement
RAM
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

12

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.317499592