Modeling and simulation of charge-pumping characteristics for LDD-MOSFET devices with LOCOS isolation

Subjects

Subjects :

Metal oxide semiconductor field effect transistors -- Design and construction
Silicon -- Electric properties
Gaussian processes -- Usage
Oxidation-reduction reaction -- Analysis
Voltage -- Measurement
Simulation methods -- Usage
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

11

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.317448759