Layout variation effects in advanced MOSFETs: STI-induced embedded SiGe strain relaxation and dual-stress-liner boundary proximity effect

Subjects

Subjects :

Silicon compounds -- Electric properties
Germanium -- Electric properties
Metal oxide semiconductor field effect transistors -- Innovations
Voltage -- Measurement
Electron mobility -- Methods
Simulation methods -- Usage
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

11

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.317448731