Analytical approximation for the surface potential in n-channel MOSFETs considering quantum-mechanical effects

Subjects

Subjects :

Approximation theory -- Methods
Metal oxide semiconductor field effect transistors -- Innovations
Quantum theory -- Usage
Simulation methods -- Usage
Numerical analysis -- Usage
Poisson's equation -- Usage
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

8

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.317114964