HiSIM-HV: a compact model for simulation of high-voltage MOSFET circuits

Subjects

Subjects :

Metal oxide semiconductor field effect transistors -- Innovations
Voltage -- Measurement
Simulation methods -- Usage
Distribution (Probability theory) -- Usage
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

10

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.317102946