Statistical evaluation of process damage using an arrayed test pattern in a large number of MOSFETs

Subjects

Subjects :

Metal oxide semiconductor field effect transistors -- Innovations
Mathematical statistics -- Usage
Very-large-scale integration -- Usage
Voltage -- Measurement
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

6

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.316945942