Short-circuit capability of SiC buried-gate static induction transistors: basic mechanism and impacts of channel width on short-circuit performance

Subjects

Subjects :

Silicon carbide -- Electric properties
Voltage -- Measurement
Simulation methods -- Usage
Bipolar transistors -- Innovations
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

4

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.316703684