The high-mobility bended n-channel silicon nanowire transistor

Authors :: Moselund, K.E.
Najmzadeh, M.
Dobrosz, P.
Olsen, S.H.
Bouvet, D.
De Michielis, L.
Pott, V.
Ionescu, A.M.
Source :: IEEE Transactions on Electron Devices. April, 2010, Vol. 57 Issue 4, p866, 10 p.
Publication Year :: 2010

Subjects :: Silicon -- Electric properties
Field-effect transistors -- Innovations
Electron mobility -- Methods
Voltage -- Measurement
Electric fields -- Usage
Business
Electronics
Electronics and electrical industries

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