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Growth and characteristics of Yb-doped {\rm Y}_{3}{\rm Ga}_{5}{\rm O}_{12} laser crystal
- Source :
- IEEE Journal of Quantum Electronics. Dec, 2010, Vol. 46 Issue 12, p1689, 6 p.
- Publication Year :
- 2010
Details
- Language :
- English
- ISSN :
- 00189197
- Volume :
- 46
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- IEEE Journal of Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.310709289