Gate bias dependence of single event charge collection in AlSb/InAs HEMTs

Subjects

Subjects :

Computer-aided design -- Methods
High-electron-mobility transistors -- Composition
High-electron-mobility transistors -- Usage
Semiconductor industry -- Research
Semiconductor industry
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189499

Volume :

57

Issue :

4

Database :

Gale General OneFile

Journal :

IEEE Transactions on Nuclear Science

Publication Type :

Academic Journal

Accession number :

edsgcl.249830141