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Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements

Authors :
Schwank, James R.
Shaneyfelt, Marty R.
McMorrow, Dale
Ferlet-Cavrois, Veronique
Dodd, Paul
Heidel, David F.
Marshall, Paul W.
Pellish, Jonathan A.
LaBel, Kenneth A.
Rodbell, Kenneth P.
Hakey, Mark
Flores, Richard S.
Swanson, Scot E.
Dalton, Scott M.
Source :
IEEE Transactions on Nuclear Science. August, 2010, Vol. 57 Issue 4, p1827, 8 p.
Publication Year :
2010

Subjects

Subjects :
Silicon-on-isolator -- Design and construction
Silicon-on-isolator -- Properties
Linear energy transfer -- Research
Heavy ions -- Testing
Lasers -- Usage
Hardness -- Testing
Absorption -- Measurement
Laser
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189499
Volume :
57
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
edsgcl.249647093

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Authors Abstract Subjects Details